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Origin of tensile stress in the Si substrate induced by TiN/HfO2 metal gate/high-k dielectric gate stack.

Authors :
Wang, J. G.
Kim, Jiyoung
Kang, Chang Yong
Lee, Byoung Hun
Jammy, Raj
Choi, Rino
Kim, M. J.
Source :
Applied Physics Letters. 10/20/2008, Vol. 93 Issue 16, p161913. 3p. 1 Diagram, 2 Graphs.
Publication Year :
2008

Abstract

The tensile stress induced by the metal TiN film in the atomic layer deposited HfO2/TiN stacks has been found from the crystallite coalescence mechanism of the Volmer–Weber-type growth mode at the early stage of the TiN film formation. The higher tensile stress induced by 3 nm TiN film than that by the 20 nm TiN film resulted from the smaller grain size and the [200] orientation of the TiN layer. Electron energy loss spectrum profile shows that there is no significant elemental interdiffusion between HfO2 and TiN, which could contribute to stress relaxation. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
93
Issue :
16
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
35279285
Full Text :
https://doi.org/10.1063/1.3009572