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Thermal stability improvement of Si1− y C y layers by SiO2 cap layers
- Source :
-
Thin Solid Films . Nov2008, Vol. 517 Issue 1, p213-215. 3p. - Publication Year :
- 2008
-
Abstract
- Abstract: We studied on the thermal stability improvement of Si1− y C y against high temperature annealing by using SiO2 cap layers. The Si1− y C y films with a carbon concentration of 1.0% were grown at 620 °C by a gas source MBE. From XRD measurements, the layer with a carbon concentration of 0.79% formed in the Si1− y C y films without SiO2 cap layers after annealing at 900 °C and it indicated the segregation of carbon atoms. The 100-nm SiO2 cap layers effectively prevented the segregation of carbon atoms when the Si1− y C y film thickness was less than its critical thickness. X-ray reciprocal lattice space maps around (115) reciprocal lattice points supported these phenomena, showing that the SiO2 cap layer improved the thermal stability of Si1− y C y films against annealing at 900 °C. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 517
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 35070879
- Full Text :
- https://doi.org/10.1016/j.tsf.2008.08.013