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Silicide and germanide technology for contacts and gates in MOSFET applications

Authors :
Zaima, Shigeaki
Nakatsuka, Osamu
Kondo, Hiroki
Sakashita, Mitsuo
Sakai, Akira
Ogawa, Masaki
Source :
Thin Solid Films. Nov2008, Vol. 517 Issue 1, p80-83. 4p.
Publication Year :
2008

Abstract

Abstract: We report silicide and germanide technology for ohmic contacts and metal gates of MOSFETs in this paper. We have investigated the control technology of NiSi/Si contact properties by incorporating third elements such as Ge and C for future ULSI applications. The work function and resistivity of various Ni and Pt germanides have been also examined as metal gate materials. The low resistivity and tunable work function of these silicides and germanides are desirable for future CMOS devices. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
00406090
Volume :
517
Issue :
1
Database :
Academic Search Index
Journal :
Thin Solid Films
Publication Type :
Academic Journal
Accession number :
35070762
Full Text :
https://doi.org/10.1016/j.tsf.2008.08.097