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Silicide and germanide technology for contacts and gates in MOSFET applications
- Source :
-
Thin Solid Films . Nov2008, Vol. 517 Issue 1, p80-83. 4p. - Publication Year :
- 2008
-
Abstract
- Abstract: We report silicide and germanide technology for ohmic contacts and metal gates of MOSFETs in this paper. We have investigated the control technology of NiSi/Si contact properties by incorporating third elements such as Ge and C for future ULSI applications. The work function and resistivity of various Ni and Pt germanides have been also examined as metal gate materials. The low resistivity and tunable work function of these silicides and germanides are desirable for future CMOS devices. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 517
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 35070762
- Full Text :
- https://doi.org/10.1016/j.tsf.2008.08.097