Cite
Magneto-photoluminescence in a type-II broken-gap n-GaInAsSb/ p-InAs heterojunction.
MLA
Moiseev, K. D., et al. “Magneto-Photoluminescence in a Type-II Broken-Gap n-GaInAsSb/ p-InAs Heterojunction.” Semiconductors, vol. 42, no. 9, Sept. 2008, pp. 1108–12. EBSCOhost, https://doi.org/10.1134/S1063782608090182.
APA
Moiseev, K. D., Mikhaǐlova, M. P., Yakovlev, Y. P., Korolev, K. A., Meinning, C., & McCombe, B. (2008). Magneto-photoluminescence in a type-II broken-gap n-GaInAsSb/ p-InAs heterojunction. Semiconductors, 42(9), 1108–1112. https://doi.org/10.1134/S1063782608090182
Chicago
Moiseev, K. D., M. P. Mikhaǐlova, Yu. P. Yakovlev, K. A. Korolev, C. Meinning, and B. McCombe. 2008. “Magneto-Photoluminescence in a Type-II Broken-Gap n-GaInAsSb/ p-InAs Heterojunction.” Semiconductors 42 (9): 1108–12. doi:10.1134/S1063782608090182.