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Interface structure of microcrystalline silicon deposited by inductive coupled plasma using internal low inductance antenna
- Source :
-
Surface & Coatings Technology . Aug2008, Vol. 202 Issue 22/23, p5672-5675. 4p. - Publication Year :
- 2008
-
Abstract
- Abstract: Hydrogenated microcrystalline silicon (µc-Si:H) films were prepared by inductive coupled plasma chemical vapor deposition (ICP-CVD) system using internal low inductance antenna (LIA) units on various under layer composed of Si, O, and N. The resultant changes in the crystallinity of the µc-Si:H films were investigated using Raman scattering spectroscopy and the details of the interface structure were observed by high resolution transmission electron microscope. We had found that µc-Si:H film on the SiN x layer treated by O2 plasma has good interface quality. The highly crystallized µc-Si:H films with no amorphous incubation layer at interface of Si/SiN x could be directly deposited on the SiN x layer. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 02578972
- Volume :
- 202
- Issue :
- 22/23
- Database :
- Academic Search Index
- Journal :
- Surface & Coatings Technology
- Publication Type :
- Academic Journal
- Accession number :
- 34199170
- Full Text :
- https://doi.org/10.1016/j.surfcoat.2008.06.042