Direct electrical measurement of an individual α-Fe2O3 nanobridge field effect transistor formed via one-step thermal oxidation.

An α-Fe2O3 nanobridge (NB) was laterally grown via the one-step thermal oxidation of 150 nm Fe film at 350 °C for 1 h in air atmosphere to form a NB field effect transistor (FET). The diameter of the as-grown NB was 7 nm, with a length of 170 nm. The electrical properties of the individual α-Fe2O3 NB were directly measured by microprobing the NB FET. The results show that the NB demonstrated N-type semiconductive behavior with a conductivity of 1.67 S/cm. [ABSTRACT FROM AUTHOR]