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Direct electrical measurement of an individual α-Fe2O3 nanobridge field effect transistor formed via one-step thermal oxidation.
- Source :
-
Applied Physics Letters . 8/25/2008, Vol. 93 Issue 8, p083113. 3p. 3 Diagrams, 1 Graph. - Publication Year :
- 2008
-
Abstract
- An α-Fe2O3 nanobridge (NB) was laterally grown via the one-step thermal oxidation of 150 nm Fe film at 350 °C for 1 h in air atmosphere to form a NB field effect transistor (FET). The diameter of the as-grown NB was 7 nm, with a length of 170 nm. The electrical properties of the individual α-Fe2O3 NB were directly measured by microprobing the NB FET. The results show that the NB demonstrated N-type semiconductive behavior with a conductivity of 1.67 S/cm. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 93
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 34198787
- Full Text :
- https://doi.org/10.1063/1.2976547