Back to Search
Start Over
Interaction of Pb defects at the (111)Si/SiO2 interface with molecular hydrogen: Simultaneous...
- Source :
-
Journal of Applied Physics . 7/1/2000, Vol. 88 Issue 1, p489. 9p. 1 Chart, 4 Graphs. - Publication Year :
- 2000
-
Abstract
- Analyzes the simultaneous action of passivation and dissociation during thermochemical interaction of trivalent interfacial silicon (Si) traps with molecular hydrogen. Full interaction case; Passivation in hydrogen; Successive passivation treatments in hydrogen; Experimental assessment and verification.
- Subjects :
- *SILICON
*HYDROGEN
*PASSIVITY (Chemistry)
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 88
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 3406001
- Full Text :
- https://doi.org/10.1063/1.373684