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Rapid thermal annealing induced changes on the contact of Ni/Au to N-doped ZnO
- Source :
-
Applied Surface Science . Aug2008, Vol. 254 Issue 21, p6962-6966. 5p. - Publication Year :
- 2008
-
Abstract
- Abstract: N-doped p-type ZnO (p∼1018cm-3) was grown on sapphire(0001) substrate by metal-organic chemical vapor deposition method. Ni/Au metal was evaporated on the ZnO film to form contacts. As-deposited contacts were rectifying while ohmic behavior was achieved after thermally annealing the contacts in nitrogen environment. Specific contact resistance was determined by circular transmission line method and a minimum specific contact resistance of 8×10−4 Ωcm2 was obtained for the sample annealed at 650°C for 30s. However, Hall effect measurements indicate that, as the rapid thermal annealing temperature increased up to 550°C or higher the samples’ conductive type have changed from p-type to n-type, which may be due to the instability nature of the present-day p-type N-doped ZnO or the dissociation of ZnO caused by annealing process in N2 ambient. Evolution of the sample''s electric characteristics and the increment of metal/semiconductor interface states induced by rapid thermal annealing process are supposed to be responsible for the improvement of electrical properties of Au/Ni/ZnO. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 01694332
- Volume :
- 254
- Issue :
- 21
- Database :
- Academic Search Index
- Journal :
- Applied Surface Science
- Publication Type :
- Academic Journal
- Accession number :
- 33991766
- Full Text :
- https://doi.org/10.1016/j.apsusc.2008.05.118