Analytical Electron-Mobility Model for Arbitrarily Stressed Silicon.

It was experimentally and numerically indicated that both the valley splitting and effective-mass variation contribute to the stress-induced enhancement of electron mobility in the MOSFET channel. In this paper, an analytical electron-mobility model for arbitrarily strained silicon is presented. The electron-mobility model includes the strain effects of both the effective-mass variation and valley degeneration. The expression of strained conduction band used in the analytical model is based on the k · p theory and accords well with numerical results of nonlocal empirical pseudopotential method (EPM). By using the mobility model, mobilities under different stresses are investigated. [ABSTRACT FROM AUTHOR]