Electron Landé g factor in GaAs–(Ga,Al)As quantum wells under applied magnetic fields: Effects of Dresselhaus spin splitting.

The effects of the Dresselhaus spin splitting on the Landé g factor associated with conduction electrons in GaAs–(Ga,Al)As quantum wells are studied by using the nonparabolic Ogg–McCombe effective Hamiltonian. The g factor and cyclotron effective mass are calculated as functions of applied magnetic fields (along both the growth and in-plane directions) and GaAs well widths of the heterostructure. Present calculations indicate that in GaAs–(Ga,Al)As heterostructures, the inclusion of the Dresselhaus term leads to very small corrections in the effective Landé factor. Taking into account the effects of nonparabolic and anisotropic terms in the Hamiltonian is fundamental in obtaining quantitative agreement with experimental measurements. Moreover, the present results suggest that previous theoretical work on the Dresselhaus spin-splitting effects on the effective Landé factor should be viewed with caution if nonparabolic and anisotropic effects are not taken into account. [ABSTRACT FROM AUTHOR]