Cite
Hf–O–N and HfO2 barrier layers for Hf–Ti–O gate dielectric thin films
MLA
Ramani, K., et al. “Hf–O–N and HfO2 Barrier Layers for Hf–Ti–O Gate Dielectric Thin Films.” Microelectronic Engineering, vol. 85, no. 8, Aug. 2008, pp. 1758–61. EBSCOhost, https://doi.org/10.1016/j.mee.2008.05.001.
APA
Ramani, K., Singh, R. K., & Craciun, V. (2008). Hf–O–N and HfO2 barrier layers for Hf–Ti–O gate dielectric thin films. Microelectronic Engineering, 85(8), 1758–1761. https://doi.org/10.1016/j.mee.2008.05.001
Chicago
Ramani, K., R.K. Singh, and V. Craciun. 2008. “Hf–O–N and HfO2 Barrier Layers for Hf–Ti–O Gate Dielectric Thin Films.” Microelectronic Engineering 85 (8): 1758–61. doi:10.1016/j.mee.2008.05.001.