Multilayer atom chips for versatile atom micromanipulation.

We employ a combination of optical and electron-beam lithography to create an atom chip combining submicron wire structures with larger conventional wires on a single substrate. The multilayer fabrication enables crossed wire configurations, greatly enhancing the flexibility in designing potentials for ultracold quantum gases and Bose–Einstein condensates. Large current densities of >6×107 A/cm2 and high voltages of up to 65 V across 0.3 μm gaps are supported by even the smallest wire structures. We experimentally demonstrate the flexibility of the next generation atom chip by producing Bose–Einstein condensates in magnetic traps created by a combination of wires involving all different fabrication methods and structure sizes. [ABSTRACT FROM AUTHOR]