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Photo- and thermally induced changes in the refractive index and film thickness of amorphous As2S8 film.
- Source :
-
Journal of Applied Physics . Jun2008, Vol. 103 Issue 12, p123523. 5p. 7 Graphs. - Publication Year :
- 2008
-
Abstract
- Changes in the refractive index and thickness of amorphous As2S8 semiconductor film are observed under illumination, annealing–illumination, and annealing-illumination cycles. Properties of the As2S8 film are measured using techniques of prism coupler, x-ray diffraction spectra and Raman spectra. After light illumination the refractive index change in an as-deposited As2S8 film is one order of magnitude greater than that of an annealed As2S8 film, corresponding to ∼0.06 and ∼0.0057, respectively. Photoexpansions with a change in the relative film thickness of the as-deposited and annealed As2S8 film are nearly -3.5% and -2.1%, respectively, which exhibit the photodensification. The full reversibility of the photoinduced refractive index change is claimed on an annealed As2S8 film sample. [ABSTRACT FROM AUTHOR]
- Subjects :
- *THIN films
*RAMAN effect
*SEMICONDUCTORS
*X-ray diffraction
*ANNEALING of crystals
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 103
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 32969914
- Full Text :
- https://doi.org/10.1063/1.2942397