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Negative-effective-mass ballistic field-effect transistor: Theory and modeling.

Authors :
Gribnikov, Z. S.
Vagidov, N. Z.
Source :
Journal of Applied Physics. 5/15/2000, Vol. 87 Issue 10, p7466. 10p. 2 Diagrams, 9 Graphs.
Publication Year :
2000

Abstract

Presents information on a study which examined the negative-effective-mass ballistic field-effect transistors. Ballistic carrier transport in diode structures; Ballistic carrier transport in gated structures; Numerical simulation procedure; Simulation results; Conclusions.

Subjects

Subjects :
*BALLISTICS
*DIODES
*FIELD-effect transistors

Details

Language :
English
ISSN :
00218979
Volume :
87
Issue :
10
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
3282209
Full Text :
https://doi.org/10.1063/1.373011
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