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CHARACTERIZATION OF METAL-FERROELECTRIC-SEMICONDUCTOR STRUCTURE USING FERROELECTRIC POLYMER POLYVINYLIDENE FLUORIDE-TRIFLUOROETHYLENE (PVDF-TrFE) (51/49).
- Source :
-
Integrated Ferroelectrics . 2008, Vol. 98 Issue 1, p121-127. 7p. 1 Diagram, 3 Graphs. - Publication Year :
- 2008
-
Abstract
- In this work, we fabricated metal-ferroelectric-semiconductor (MFS) diodes with polyvinylidene fluoride-trifluoroethylene (PVDF-TrFE) (51/49) thin films for application to one transistor-type (1T-type) ferroelectric random access memories (FeRAMs). The thin films, with various thicknesses, were prepared on a silicon substrate by using a spin-coating method. The β-phase crystallinity and the grain size of the PVDF-TrFE increased as the film-thickness increased. Typical ferroelectric hysteresis loops were obtained from the capacitance-voltage (C-V) curves. These loops might be considered to be due to the ferroelectric nature of the PVDF-TrFE films. The values of the memory window width for 50-nm-, 150-nm-, and 350-nm-thick PVDF-TrFE films were about 1.4, 2.0, and 3.5 V for a bias sweeping from -5 V to 5 V, respectively. The values of the leakage current density, at a sweeping range of ± 5 V, were about 2.7 × 10-5 A/cm2, 1.1 × 10-5 A/cm2, and 5.6× 10-6 A/cm2 for 50-nm-, 150-nm-, and 350-nm-thick films, respectively. These results are useful and promising for realizing 1T-type FeRAMs operating at a low voltage. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10584587
- Volume :
- 98
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Integrated Ferroelectrics
- Publication Type :
- Academic Journal
- Accession number :
- 32771360
- Full Text :
- https://doi.org/10.1080/10584580802092548