Improving fMAX/fT ratio in FinFETs using source/drain extension region engineering.

A design methodology to optimise the ratio of maximum oscillation frequency to cutoff frequency, fMAX/fT, in 60 nm FinFETs is presented. Results show that 25 to 60% improvement in fMAX/fT at drain currents of 20–300 µA/µm can be achieved in a non-overlap gate-source/drain architecture. The reported work provides new insights into the design and optimisation of nanoscale FinFETs for RF applications. [ABSTRACT FROM AUTHOR]