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Approach to Electrochemical C-V Profiling in Semiconductor with Sub-Debye-Length Resolution.
- Source :
-
IEEE Transactions on Electron Devices . Jun2000, Vol. 47 Issue 6, p1221. 4p. 2 Black and White Photographs, 4 Graphs. - Publication Year :
- 2000
-
Abstract
- Deals with a study which proposed three methods for determination of a detailed structure of dopant distribution in semiconductors based on the data of electrochemical capacitance-voltage profiling. Basic equations; Approximation of complete depletion of the nonuniform doped region; Method for inverse reconstruction of the doping profile; Results of numerical simulation; Conclusion.
- Subjects :
- *SEMICONDUCTORS
*CAPACITANCE meters
*DOPED semiconductors
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 47
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 3264843
- Full Text :
- https://doi.org/10.1109/16.842965