P—Type Conduction of ZnO Thin Film by Codoping Technique.

Aluminium and zinc target were co—sputtered on silicon (111) substrates using DC magnetron sputtering in the pure argon atmosphere. These films were then underwent the thermal annealing in different ratios of nitrogen and oxygen for 1 hour to form thin oxide films. P—type conduction in ZnO thin films have been realized by the Al—N codoping method, whereby the lowest resistivity of 3.41×10-3 Ω·cm and the highest carrier concentration of 1.54×1022 cm-3 was achieved for sample prepared at annealed temperature of 300 °C. [ABSTRACT FROM AUTHOR]