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Growth and characterization of AlGaN/GaN heterostructures on semi-insulating GaN epilayers by molecular beam epitaxy.
- Source :
-
Journal of Applied Physics . May2008, Vol. 103 Issue 9, p094502. 5p. 1 Color Photograph, 1 Diagram, 4 Graphs. - Publication Year :
- 2008
-
Abstract
- Al0.30Ga0.70N/GaN heterostructures grown on sapphire substrates by rf-plasma-assisted molecular beam epitaxy are investigated. The heterostructures consist of a 20 nm Al0.30Ga0.70N barrier layer deposited on a 2 μm semi-insulating GaN epilayer. Room-temperature mobilities averaging 1350 cm2/V s and a sheet charge density of 1.1×1013 cm-2 are consistently achieved. Central to our approach is the iron-doped semi-insulating GaN epilayer and a pulsed N/Ga atomic deposition technique which makes it possible to simultaneously reduce threading dislocations and achieve a smooth surface. The heterostructures were examined by x-ray diffraction, transmission electron microscopy, and atomic force microscopy. Structural characterizations reveal a smooth surface morphology, coherent and sharp interfaces, and a low density of the threading dislocations. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 103
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 32079015
- Full Text :
- https://doi.org/10.1063/1.2909188