Cite
Effect of buffer growth temperature on crystalline quality and optical property of In0.82Ga0.18As/InP grown by LP-MOCVD
MLA
Zhang, Tiemin, et al. “Effect of Buffer Growth Temperature on Crystalline Quality and Optical Property of In0.82Ga0.18As/InP Grown by LP-MOCVD.” Journal of Alloys & Compounds, vol. 458, no. 1/2, June 2008, pp. 363–65. EBSCOhost, https://doi.org/10.1016/j.jallcom.2007.03.104.
APA
Zhang, T., Miao, G., Jin, Y., Jiang, H., Li, Z., & Song, H. (2008). Effect of buffer growth temperature on crystalline quality and optical property of In0.82Ga0.18As/InP grown by LP-MOCVD. Journal of Alloys & Compounds, 458(1/2), 363–365. https://doi.org/10.1016/j.jallcom.2007.03.104
Chicago
Zhang, Tiemin, Guoqing Miao, Yixin Jin, Hong Jiang, Zhiming Li, and Hang Song. 2008. “Effect of Buffer Growth Temperature on Crystalline Quality and Optical Property of In0.82Ga0.18As/InP Grown by LP-MOCVD.” Journal of Alloys & Compounds 458 (1/2): 363–65. doi:10.1016/j.jallcom.2007.03.104.