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Growth of thick films CdTe from the vapor phase
- Source :
-
Journal of Crystal Growth . Apr2008, Vol. 310 Issue 7-9, p2062-2066. 5p. - Publication Year :
- 2008
-
Abstract
- Abstract: CdTe films with a thickness of 100μm were grown by molecular beam epitaxy (MBE) on semi-insulating LEC GaAs (001) substrates. The films were characterized by X-ray diffraction (XRD), photoluminescence (PL), X-ray photoelectron spectroscopy (XPS), I/V characteristics and detector measurements using a 241Am source. The grown layers were highly oriented as revealed from X-ray pole figure measurements and high-resolution XRD experiments. Low temperature PL measurements showed the formation of A-center complexes including Ga and In acting as donors. Furthermore, the distribution of these impurities in the films was determined by spatially resolved PL measurements. XPS demonstrates the formation of a TeO2 overlayer due to Cd depletion at the surface of the films. The electrical measurements including I/V characteristics and detector measurements resulted in resistivity values of around 3×108 Ωcm and a μt product of electrons of 10−5 cm2/V. [Copyright &y& Elsevier]
- Subjects :
- *SPECTRUM analysis
*EPITAXY
*SURFACES (Technology)
*THIN films
Subjects
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 310
- Issue :
- 7-9
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 31581767
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2007.10.059