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A solid phase reaction between TiCx thin films and Al2O3 substrates.
- Source :
-
Journal of Applied Physics . Mar2008, Vol. 103 Issue 6, p066102. 3p. 1 Diagram, 3 Graphs. - Publication Year :
- 2008
-
Abstract
- TiCx thin films were deposited on Al2O3 substrates at 900 °C by using a multiple cathode high current pulsed cathodic arc. The Ti:C pulse ratio and, hence, the composition was varied from C rich to Ti rich. It is found that the Al2O3 substrate is decomposed and reacts with the TiCx film to incorporate significant amounts of O and Al in the growing film. When the stoichiometry is suitable, epitaxially oriented Ti2AlC MAX phase with significant O incorporated is formed. The results indicate that Al2O3 is not an ideal substrate material for the growth of transition metal carbides and MAX phase thin films. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 103
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 31506723
- Full Text :
- https://doi.org/10.1063/1.2896637