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HEMT-BASED NANOMETER DEVICES TOWARD TERAHERTZ ERA.

Authors :
Sano, Eiichi
Otsuji, Taiichi
Source :
International Journal of High Speed Electronics & Systems. Sep2007, Vol. 17 Issue 3, p509-520. 12p. 3 Diagrams, 8 Graphs.
Publication Year :
2007

Abstract

The terahertz region is one of the unexplored bands. This paper first reviews the present status of conventional high-speed devices, especially InP-based high electron mobility transistors (HEMTs), and addresses the technological problems facing the goal of terahertz operation. As an alternative approach to solve these problems, we developed a plasmon-resonant photomixer for realizing a coherent terahertz continuous-wave source. Preliminary results on electromagnetic response to impulsive photoexcitation at room temperature are reported briefly. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
01291564
Volume :
17
Issue :
3
Database :
Academic Search Index
Journal :
International Journal of High Speed Electronics & Systems
Publication Type :
Academic Journal
Accession number :
31416751
Full Text :
https://doi.org/10.1142/S0129156407004709