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Growth and characterization of Yb3+ doped Y2SiO5 layers on Y2SiO5 substrate for laser applications
- Source :
-
Optical Materials . Apr2008, Vol. 30 Issue 8, p1289-1296. 8p. - Publication Year :
- 2008
-
Abstract
- Abstract: We report on the epitaxial growth and spectroscopic study of highly doped Y2SiO5:Yb3+ (YSO:Yb) thin films on YSO substrates. The realization of Ge, La and Gd-codoped high quality thin films, with thickness up to 100μm, is demonstrated. YSO:Yb layers have their fluorescence and absorption spectra similar to the bulk ones, with a globally higher crystalline quality. The Yb3+ lifetime evolution exhibits a particularly slow decrease with Yb doping, proof of a low extrinsic quenching centers concentration. The refractive index increase with respect to dopants concentration is measured, and a phenomenological law is proposed. Such highly doped YSO:Yb layers could be an interesting alternative for active integrated optics or laser devices. [Copyright &y& Elsevier]
- Subjects :
- *EPITAXY
*INTEGRATED optics
*FLUORESCENCE
*THIN films
Subjects
Details
- Language :
- English
- ISSN :
- 09253467
- Volume :
- 30
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Optical Materials
- Publication Type :
- Academic Journal
- Accession number :
- 31400498
- Full Text :
- https://doi.org/10.1016/j.optmat.2007.06.013