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Recent Advances in the Performance of InP Gunn Devices and GaAs TUNNETT Diodes for the...

Authors :
Eisele, Heribert
Rydberg, Anders
Source :
IEEE Transactions on Microwave Theory & Techniques. Apr2000 Part 2, Vol. 48 Issue 4, p626. 6p. 5 Diagrams, 4 Graphs.
Publication Year :
2000

Abstract

Discusses the improved heat dissipation of InP Gunn devices. Radio frequency power levels and oscillation frequencies resulting from the improved heat dissipation; Corresponding direct current-to-radio frequency conversion efficiencies; Properties of millimeter-wave devices.

Details

Language :
English
ISSN :
00189480
Volume :
48
Issue :
4
Database :
Academic Search Index
Journal :
IEEE Transactions on Microwave Theory & Techniques
Publication Type :
Academic Journal
Accession number :
3100209
Full Text :
https://doi.org/10.1109/22.841952