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One-phonon-assisted resonant electron Raman scattering of GaAs quantum dots in an AlAs matrix
- Source :
-
Physics Letters A . Mar2008, Vol. 372 Issue 12, p2103-2108. 6p. - Publication Year :
- 2008
-
Abstract
- Abstract: We have presented a theoretical calculation of the differential cross section (DCS) for the electron Raman scattering (ERS) process associated with the bulk-like longitudinal optical (LO) and interface optical (IO) phonon modes in semiconductor quantum dots (QDs). Electron states are considered to be confined within the QDs. We consider the Fröhlich electron–phonon interaction in the framework of the dielectric continuum approach. We study selection rules for the processes. Some singularities in the Raman spectra are found and interpreted. A discussion of the phonon behavior for QDs with large and small size is presented. The numerical results are also compared with that of experiments. [Copyright &y& Elsevier]
- Subjects :
- *GALLIUM arsenide
*RAMAN effect
*QUANTUM dots
*PHONONS
Subjects
Details
- Language :
- English
- ISSN :
- 03759601
- Volume :
- 372
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Physics Letters A
- Publication Type :
- Academic Journal
- Accession number :
- 30655680
- Full Text :
- https://doi.org/10.1016/j.physleta.2007.10.083