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Diffusion of implanted nitrogen in silicon.
- Source :
-
Journal of Applied Physics . 3/1/2000, Vol. 87 Issue 5, p2282. 3p. 5 Graphs. - Publication Year :
- 2000
-
Abstract
- Provides information on a study which examined the diffusion behavior of nitrogen implanted in silicon. Experimental analysis; Results and discussion.
- Subjects :
- *NITROGEN
*DIFFUSION
*SILICON
*ION implantation
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 87
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 2882394
- Full Text :
- https://doi.org/10.1063/1.372173