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Comparative structural and electrical analysis of NiO and Ti doped NiO as materials for resistance random access memory.
- Source :
-
Journal of Applied Physics . Jan2008, Vol. 103 Issue 1, p013706. 4p. 1 Diagram, 4 Graphs. - Publication Year :
- 2008
-
Abstract
- In order to investigate the mechanism behind bistable resistance switching in NiO thin films, we have done detailed x-ray photon spectroscopy (XPS) and x-ray diffraction Analysis (XRD) on NiO and Ti doped NiO samples fabricated under various conditions. We discovered that a high initial resistivity was required for samples to undergo bistable resistance switching, and the presence of metallic Ni content in these samples was determined by XPS. XRD data also showed that NiO grown with a relative (200) orientation was preferred over those grown with relative (111) orientation. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 103
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 28528109
- Full Text :
- https://doi.org/10.1063/1.2829814