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Geometry and Strain Dependence of the Proton Radiation Behavior of MuGFET Devices.
- Source :
-
IEEE Transactions on Nuclear Science . Dec2007 Part 1 of 2, Vol. 54 Issue 6, p2227-2232. 6p. 2 Diagrams, 6 Charts, 7 Graphs. - Publication Year :
- 2007
-
Abstract
- The proton irradiation effects on n-MuGFET devices with three different geometries (single fin, wide fin and multiple fin) are studied. Also, the effect of tensile strain in the fin on the radiation behavior is investigated. A fundamental difference in the radiation behavior between the non-strained and the strained devices is found. The degradation of the strained devices is most affected by the mobility decrease of the backside transistor. The non-strained devices show a much lesser back gate mobility degradation. For these devices the creation of positive oxide traps is dominant. This shifts the onset of the back channel to lower gate voltages, inducing a transconductance increase at intermediate gate voltages. This effect is less pronounced for single fin MuGFETs. At higher gate voltage, the transconductance decreases for the strained and increases for the non-strained transistors. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 54
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 28153194
- Full Text :
- https://doi.org/10.1109/TNS.2007.911420