Polarities of AlN films and underlying 3C-SiC intermediate layers grown on (111) Si substrates

MLA

Komiyama, Jun, et al. “Polarities of AlN Films and Underlying 3C-SiC Intermediate Layers Grown on (111) Si Substrates.” Journal of Crystal Growth, vol. 310, no. 1, Jan. 2008, pp. 96–100. EBSCOhost, https://doi.org/10.1016/j.jcrysgro.2007.10.017.

APA

Komiyama, J., Eriguchi, K., Abe, Y., Suzuki, S., Nakanishi, H., Yamane, T., Murakami, H., & Koukitu, A. (2008). Polarities of AlN films and underlying 3C-SiC intermediate layers grown on (111) Si substrates. Journal of Crystal Growth, 310(1), 96–100. https://doi.org/10.1016/j.jcrysgro.2007.10.017

Chicago

Komiyama, Jun, Kenichi Eriguchi, Yoshihisa Abe, Shunichi Suzuki, Hideo Nakanishi, Takayoshi Yamane, Hisashi Murakami, and Akinori Koukitu. 2008. “Polarities of AlN Films and Underlying 3C-SiC Intermediate Layers Grown on (111) Si Substrates.” Journal of Crystal Growth 310 (1): 96–100. doi:10.1016/j.jcrysgro.2007.10.017.