Resistive switching devices based on nanocrystalline solid electrolyte (AgI)0.5(AgPO3)0.5.

Resistive switching devices with a sandwich structure Ag/(AgI)0.5(AgPO3)0.5/Pt were fabricated on silicon(001) wafer by using the pulsed laser deposition method and the focused ion beam nanofabrication technique. (AgI)0.5(AgPO3)0.5 films deposited at room temperature show a nanocrystal structure and the composition of the films was identified by using x-ray photoelectron spectroscopy. The current-voltage characteristics of the Ag/(AgI)0.5(AgPO3)0.5/Pt memory units show good switching behaviors. The ratio of the conductance between the “ON” state (high conductance) and the “off” state (low conductance) reaches 1×106. The ON and OFF states can be effectively written, read, and erased up to 4×105 scanning cycles by using a set of voltage pulses with an amplitude less than 3 V. It also could be observed that the time for the writing and erasing operations could be less than 150 ns. The switching mechanism of the Ag/(AgI)0.5(AgPO3)0.5/Pt memory devices was ascribed to the possible formation and dissolution of Ag filaments in (AgI)0.5(AgPO3)0.5 films induced by the applied electrical pulses with different polarities. [ABSTRACT FROM AUTHOR]