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Effect of NH3 flow rate on growth, structure and luminescence of amorphous silicon nitride films by electron cyclotron resonance plasma
- Source :
-
Thin Solid Films . Jan2008, Vol. 516 Issue 6, p1130-1136. 7p. - Publication Year :
- 2008
-
Abstract
- Abstract: In this paper, hydrogenated amorphous silicon nitride (a-SiN x :H) films have been deposited using an electron cyclotron resonance chemical vapor deposition system. The effect of NH3 flow rate R on the deposition rate, structure and luminescence were studied using various techniques such as optical emission spectroscopy, Fourier Transform Infrared absorption (FTIR), X-ray photoelectron spectroscopy (XPS) and fluoro-spectroscopy, respectively. Optical emission behavior of SiH4 +NH3 plasma shows that atomic Si radical concentration determines the film deposition rate. Structural transition of a-SiN x film from Si-rich one to near-stoichiometric/N-rich one with R was revealed by FTIR and the two phase separation of a-Si and a-Si3N4 was also convinced in Si-rich SiN x films by XPS. Either photo- or electroluminescence for all the SiN x films with R >3 sccm shows a strong light emission in visible light wavelength range. As R <6 sccm, recombination of electrons and holes in a-Si quantum dots is the main mechanism of photo/electroluminescence for Si-rich SiN x films, however, for photoluminescence, gap states'' luminescence is also in competition; as R >6 sccm, light emission of the SiN x film originates from defect states in its band gap. [Copyright &y& Elsevier]
- Subjects :
- *SILICON nitride
*CYCLOTRONS
*PARTICLE accelerators
*MICROTRONS
Subjects
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 516
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 28011203
- Full Text :
- https://doi.org/10.1016/j.tsf.2007.05.046