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Temperature-dependent interfacial chemical bonding states and band alignment of HfOxNy/SiO2/Si gate stacks.
- Source :
-
Applied Physics Letters . 12/3/2007, Vol. 91 Issue 23, p232910. 3p. 3 Graphs. - Publication Year :
- 2007
-
Abstract
- Temperature-dependent interfacial chemical bonding states and band alignment of HfOxNy/SiO2/Si gate stacks have been investigated by X-ray photoemission spectroscopy (XPS) and spectroscopic ellipsometry (SE). By means of the chemical shifts of Hf 4f, Si 2p, O 1s, and N 1s core-level spectra, it has been found that the chemical stability of the HfOxNy/SiO2/Si stacks strongly depends on the annealing temperature. Analysis of temperature-dependent band alignment of HfOxNy/SiO2/Si stacks suggests that the valence band offset ΔEv increases slowly from 1.82 eV for as-grown film to 2.55 eV for annealed film at 700 °C; however, the values of conduction band offset ΔEc only demonstrates a slight change in the vicinity of 1.50 eV. From the band offset viewpoint, HfOxNy/SiO2/Si gate stack could be a promising candidate for high-k gate dielectrics. [ABSTRACT FROM AUTHOR]
- Subjects :
- *HAFNIUM compounds
*SILICA
*SILICON
*CHEMICAL bonds
*THIN films
*ANNEALING of metals
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 91
- Issue :
- 23
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 27949457
- Full Text :
- https://doi.org/10.1063/1.2813620