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Circular photogalvanic effect at inter-band excitation in InN
- Source :
-
Solid State Communications . Jan2008, Vol. 145 Issue 4, p159-162. 4p. - Publication Year :
- 2008
-
Abstract
- Abstract: The circular photogalvanic effect (CPGE) is observed in InN at inter-band excitation. The function of the CPGE induced current on laser helicity is experimentally demonstrated and illustrated with the microscopic model. A spin-dependent current obtained in InN is one order larger than in the AlGaN/GaN heterostructures at inter-band excitation. The dependence of CPGE current amplitude on light power and incident angle can be well evaluated with phenomenological theory. This sizeable spin-dependent current not only provides an opportunity to realize spin polarized current at room temperature, but also can be utilized as a reliable tool of spin splitting investigation in semiconductors. [Copyright &y& Elsevier]
- Subjects :
- *CRYSTALS
*HETEROSTRUCTURES
*SUPERLATTICES
*MATHEMATICAL physics
Subjects
Details
- Language :
- English
- ISSN :
- 00381098
- Volume :
- 145
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Solid State Communications
- Publication Type :
- Academic Journal
- Accession number :
- 27948325
- Full Text :
- https://doi.org/10.1016/j.ssc.2007.10.040