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Morphological and structural characterizations of CrSi2 nanometric films deposited by laser ablation

Authors :
Caricato, A.P.
Leggieri, G.
Luches, A.
Romano, F.
Barucca, G.
Mengucci, P.
Mulenko, S.A.
Source :
Applied Surface Science. Dec2007, Vol. 254 Issue 4, p1224-1227. 4p.
Publication Year :
2007

Abstract

Abstract: The structure and morphology of chromium disilicide (CrSi2) nanometric films grown on 〈100〉 silicon substrates both at room temperature (RT) and at 740K by pulsed laser ablation are reported. A pure CrSi2 crystal target was ablated with a KrF excimer laser in vacuum (∼3×10−5 Pa). Morphological and structural properties of the deposited films were investigated using Rutherford backscattering spectrometry (RBS), grazing incidence X-ray diffraction (GID), X-ray reflectivity (XRR), scanning (SEM) and transmission electron microscopy (TEM). From RBS analysis, the films’ thickness resulted of ∼40nm. This value is in agreement with the value obtained from XRR and TEM analysis (∼42 and ∼38nm, respectively). The films’ composition, as inferred from Rutherford Universal Manipulation Program simulation of experimental spectra, is close to stoichiometric CrSi2. GID analysis showed that the film deposited at 740K is composed only by the CrSi2 phase. The RT deposited sample is amorphous, while GID and TEM analyses evidenced that the film deposited at 740K is poorly crystallised. The RT deposited film exhibited a metallic behaviour, while that one deposited at 740K showed a semiconductor behaviour down to 227K. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
01694332
Volume :
254
Issue :
4
Database :
Academic Search Index
Journal :
Applied Surface Science
Publication Type :
Academic Journal
Accession number :
27702099
Full Text :
https://doi.org/10.1016/j.apsusc.2007.09.026