CMOS switched resonator frequency divider tuned by the switch gate bias.

A switched resonator injection-locked frequency divider (ILFD) designed and fabricated using a standard 0.18-μm CMOS process is presented. The designed ILFD consists of double cross-coupled MOS switching pairs that use the current reuse technique to save power dissipation, and a switched LC resonator. The latter is composed of an inductor, a capacitor, and an inductor–MOS–inductor composite in parallel. The gate bias of MOSFET in the switched resonator is used to tune the free running ILFD frequency and extend the locking range of the ILFD. Measurement results show that at the supply voltage of 1.8 V, the divider free-running frequency is from 3.8 to 4.5 GHz, and at the incident power of 0 dBm the locking range is from the incident frequency of 7.6 to 9.26 GHz. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 222–225, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23045 [ABSTRACT FROM AUTHOR]