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X-ray photoelectron spectroscopy study of ZrO2/TiO2/Si stack.
- Source :
-
Applied Physics Letters . 10/22/2007, Vol. 91 Issue 17, p172902. 3p. 5 Graphs. - Publication Year :
- 2007
-
Abstract
- A ZrO2/TiO2/Si gate stack has been prepared by using solid phase reaction between sputtered ZrO2/Ti stack and underlying SiO2/Si substrate through in situ vacuum annealing. X-ray photoelectron spectroscopy was used to analyze interfacial properties of the ZrO2/TiO2/Si stack after annealing at high temperatures. The interfacial silicate is composed of Ti silicate and ZrO2 layer does not take part in the interfacial reaction to form Zr silicate. Such a stack has the advantage of combining high dielectric constant of ZrO2 and excellent interfacial property of Ti silicate/Si interface, and will have potential applications in the advanced metal-oxide-semiconductor devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 91
- Issue :
- 17
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 27371083
- Full Text :
- https://doi.org/10.1063/1.2795331