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Design Considerations for Sub-90-nm Split-Gate Flash-Memory Cells.
- Source :
-
IEEE Transactions on Electron Devices . Nov2007, Vol. 54 Issue 11, p3049-3055. 7p. 1 Black and White Photograph, 1 Diagram, 1 Chart, 1 Graph. - Publication Year :
- 2007
-
Abstract
- This paper presents a systematic methodology to design efficient sub-90-nm split-gate Flash-memory cells and optimize the cell performance within the presently known scaling constraints. The device-simulation results show that the high-performance sub-90-nm split-gate cells can be realized by a proper optimization of the channel and asymmetric halo-doping profiles and shallow source/drain junctions. In this paper, the halo- and channel-doping profiles were optimized to achieve the target drain-programming voltage Vsp = 6.5 V for an efficient cell programming, whereas keeping the breakdown voltage BV > Vsp with tolerable leakage currents. It is shown that, using the properly optimized technology parameters, 65-nm split-gate Flash memory can be achieved with cell-read current, Ir1 ≈ 235 μA/μm, programmed cell-leakage current, Ir0 < 2.2 nA/μm at the read condition, time-to-program ≈30 μs, and time-to-erase ≈40 μs. This paper clearly demonstrates the feasibility of high-performance 65-nm split-gate Flash-memory cells. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 54
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 27345974
- Full Text :
- https://doi.org/10.1109/TED.2007.907265