High Performance Pentacene Thin Film Transistors with a PVA Gate Dielectric.

Pentacene thin film transistors were fabricated and characterized with PVA thin films as a gate dielectric. The maximum process temperature was 70°C, which corresponds to a baking temperature of the spin-coated polymeric dielectric. Glass and flexible PET foils were used as substrates. Theses devices showed high performance electrical characteristics and worked at a low operating voltage of - 5 V. The highest field effect mobility of 2.6 cm2/Vs and the lowest threshold voltage of - 1.7 V were obtained on a flexible substrate. [ABSTRACT FROM AUTHOR]