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Effects of nitridation by nitric oxide on the leakage current of thin SiO... gate oxides.
- Source :
-
Journal of Applied Physics . 1/1/2000, Vol. 87 Issue 1, p498. 4p. 9 Graphs. - Publication Year :
- 2000
-
Abstract
- Focuses on a study on the effects of nitric oxide postannealing on the leakage current of thin gate oxides. Application of nitridation treatment of thin oxides; Effect of nitrogen incorporation on quasistatic characteristics of the oxides; Explanation of the asymmetric behavior shown by the leakage current with the injection polarity.
- Subjects :
- *NITRIC oxide
*OXIDES
*NITROGEN
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 87
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 2660063
- Full Text :
- https://doi.org/10.1063/1.371916