Growth of Thick Films CdTe From the Vapor Phase.

100 µm thick films of CdTe were grown on semi-insulating (100) GaAs substrates by Physical Vapor Transport (PVT) in a modified Molecular Beam Epitaxy facility. The grown layers were highly oriented as revealed from X-ray pole figure measurements. Temperature- and intensity-dependent photo-luminescence measurements were taken before and after the chemical removal of the substrate to determine the effect of the GaAs substrate and to estimate the crystallographic quality of the layers. Current-voltage characteristics were performed to obtain the resistitivity of the layers with 108cm. [ABSTRACT FROM AUTHOR]