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Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well

Authors :
Zhou, W.Z.
Lin, T.
Shang, L.Y.
Yu, G.
Huang, Z.M.
Guo, S.L.
Gui, Y.S.
Dai, N.
Chu, J.H.
Cui, L.J.
Li, D.L.
Gao, H.L.
Zeng, Y.P.
Source :
Solid State Communications. Aug2007, Vol. 143 Issue 6/7, p300-303. 4p.
Publication Year :
2007

Abstract

Abstract: We have observed the weak antilocalization (WAL) and beating SdH oscillation through magnetotransport measurements performed on a heavily -doped In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As single quantum well in an applied magnetic field up to 13 T and a temperature at 1.5 K. Both effects are caused by the strong Rashba spin–orbit (SO) coupling due to high structure inversion asymmetry (SIA). The Rashba SO coupling constant and zerofield spin splitting are estimated and the obtained values are consistent from different analysis for this sample. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
00381098
Volume :
143
Issue :
6/7
Database :
Academic Search Index
Journal :
Solid State Communications
Publication Type :
Academic Journal
Accession number :
25943196
Full Text :
https://doi.org/10.1016/j.ssc.2007.05.033