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Physical mechanisms of single-event effects in advanced microelectronics

Authors :
Schrimpf, Ronald D.
Weller, Robert A.
Mendenhall, Marcus H.
Reed, Robert A.
Massengill, Lloyd W.
Source :
Nuclear Instruments & Methods in Physics Research Section B. Aug2007, Vol. 261 Issue 1/2, p1133-1136. 4p.
Publication Year :
2007

Abstract

Abstract: The single-event error rate in advanced semiconductor technologies can be estimated more accurately than conventional methods by using simulation based on accurate descriptions of a large number of individual particle interactions. The results can be used to select the ion types and energies for accelerator testing and to identify situations in which nuclear reactions will contribute to the error rate. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
0168583X
Volume :
261
Issue :
1/2
Database :
Academic Search Index
Journal :
Nuclear Instruments & Methods in Physics Research Section B
Publication Type :
Academic Journal
Accession number :
25769484
Full Text :
https://doi.org/10.1016/j.nimb.2007.04.050