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Physical mechanisms of single-event effects in advanced microelectronics
- Source :
-
Nuclear Instruments & Methods in Physics Research Section B . Aug2007, Vol. 261 Issue 1/2, p1133-1136. 4p. - Publication Year :
- 2007
-
Abstract
- Abstract: The single-event error rate in advanced semiconductor technologies can be estimated more accurately than conventional methods by using simulation based on accurate descriptions of a large number of individual particle interactions. The results can be used to select the ion types and energies for accelerator testing and to identify situations in which nuclear reactions will contribute to the error rate. [Copyright &y& Elsevier]
- Subjects :
- *NUCLEAR physics
*NUCLEAR reactions
*NUCLEAR energy
*RADIOACTIVITY
Subjects
Details
- Language :
- English
- ISSN :
- 0168583X
- Volume :
- 261
- Issue :
- 1/2
- Database :
- Academic Search Index
- Journal :
- Nuclear Instruments & Methods in Physics Research Section B
- Publication Type :
- Academic Journal
- Accession number :
- 25769484
- Full Text :
- https://doi.org/10.1016/j.nimb.2007.04.050