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HIGH PERFORMANCE SIGEC/SI NEAR-IR ELECTROOPTIC MODULATORS AND PHOTODETECTORS.
- Source :
-
International Journal of High Speed Electronics & Systems . Mar2007, Vol. 17 Issue 1, p153-162. 10p. 11 Graphs. - Publication Year :
- 2007
-
Abstract
- Numerical simulations are performed for SiGeC/Si electrooptic modulators and photodetectors operating at near-IR wavelengths. The addition of carbon provides the ability to lattice match layers with high germanium composition to silicon, which is shown to allow structures with a substantial increase in the optical confinement factor. In addition, SiGeC/Si heterostructures provide strong confinement of large electron and hole concentrations. The large optical confinement factor and strong carrier confinement enable broadband electrooptic modulators with sub-100 μm lengths and switching times below 0.5 ns with 25 mA current as well as photodetectors with quantum efficiencies as high as 90% for 300 μm length. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 01291564
- Volume :
- 17
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- International Journal of High Speed Electronics & Systems
- Publication Type :
- Academic Journal
- Accession number :
- 25654619
- Full Text :
- https://doi.org/10.1142/S0129156407004370