32 x 32 SOl CMOS Image Sensor with Pinned Photodiode on Handle Wafer.

The article details the fabrication of a 32x32 silicon on insulator complementary metal oxide semiconductor active pixel image sensor with a pinned photodiode on a handle wafer. It describes the structure of one pixel which consists of a reset and a source follower transistor on a seed wafer. The article shows that photodiode could be optimized for better quantum efficiency and low dark currents.