Growth dynamics of C-induced Ge dots on Si1−x Ge x strained layers

MLA

Bernardi, A., et al. “Growth Dynamics of C-Induced Ge Dots on Si1−x Ge x Strained Layers.” Surface Science, vol. 601, no. 13, July 2007, pp. 2783–86. EBSCOhost, https://doi.org/10.1016/j.susc.2006.12.048.

APA

Bernardi, A., Alonso, M. I., Goñi, A. R., Ossó, J. O., & Garriga, M. (2007). Growth dynamics of C-induced Ge dots on Si1−x Ge x strained layers. Surface Science, 601(13), 2783–2786. https://doi.org/10.1016/j.susc.2006.12.048

Chicago

Bernardi, A., M.I. Alonso, A.R. Goñi, J.O. Ossó, and M. Garriga. 2007. “Growth Dynamics of C-Induced Ge Dots on Si1−x Ge x Strained Layers.” Surface Science 601 (13): 2783–86. doi:10.1016/j.susc.2006.12.048.