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Rectifying properties of the La2CuO4/Nb-0.7wt%-doped SrTiO3 heterojunction
- Source :
-
Physica C . Jul2007, Vol. 458 Issue 1/2, p51-53. 3p. - Publication Year :
- 2007
-
Abstract
- Abstract: Using a two-step growth technique, simple oxide heterostructures have been fabricated by pulsed laser depositing epitaxial La2CuO4 (LCO) thin films on Nb-0.7wt%-doped SrTiO3 (NSTO) substrates. The junctions show good rectifying behavior at all measuring temperatures and an obvious temperature dependence of current–voltage (I–V) properties in the range of 25–300K, which are discussed in relation to the p–n model. [Copyright &y& Elsevier]
- Subjects :
- *THIN films
*CRYSTALS
*HETEROSTRUCTURES
*SOLID state electronics
Subjects
Details
- Language :
- English
- ISSN :
- 09214534
- Volume :
- 458
- Issue :
- 1/2
- Database :
- Academic Search Index
- Journal :
- Physica C
- Publication Type :
- Academic Journal
- Accession number :
- 25343560
- Full Text :
- https://doi.org/10.1016/j.physc.2007.03.398