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Effect of a Ta-Si-N diffusion barrier on the texture formation in thin Cu films.
- Source :
-
Journal of Applied Physics . 5/1/2007, Vol. 101 Issue 9, p093512. 6p. 1 Chart, 5 Graphs. - Publication Year :
- 2007
-
Abstract
- Analyzing pole figures obtained by x-ray diffraction experiments, quantitative texture analyses are carried out on 50 nm thick Cu films sputter-deposited on oxidized Si substrates and on Ta-Si-N diffusion barrier films of various compositions. To explain the observed Cu texture formation during layer deposition, a model of two-dimensional grain growth in thin films is applied. In the case of silicon oxide substrates, a <111> Cu fiber texture component resulting from the minimization of the surface and interface energy is observed, in addition to a <100> component resulting from the minimization of the strain energy. For Cu films deposited onto Ta-Si-N diffusion barriers, preferred growth occurs only for <111>-oriented Cu grains and their twins. The volume fractions of both components decrease with increasing N content of the diffusion barrier. Annealing of the Cu films at Tan=600 °C results in a strengthening and a sharpening of the <111> component. Hence, both the chemical composition of the underlayer as well as a postdeposition anneal are observed to have a significant impact on the texture of thin Cu films. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 101
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 25114831
- Full Text :
- https://doi.org/10.1063/1.2720100