Universal Toffoli gate in ballistic nanowires.

Implementation of the universal Toffoli gate in a ballistic nanowire based structure has been discussed in this letter. The gate operation is dependent on spin manipulation in nanowires. Spin injection into the Toffoli gate can be done using a similar intertwined ballistic nanowire based setup. The device inputs are digital voltages and the output is obtained by spin readout. Realization of NAND gate, fan out, and half-adder based on the Toffoli gate has also been presented. [ABSTRACT FROM AUTHOR]