Carrier concentration dependence of band gap shift in n-type ZnO:Al films.

MLA

Lu, J. G., et al. “Carrier Concentration Dependence of Band Gap Shift in N-Type ZnO:Al Films.” Journal of Applied Physics, vol. 101, no. 8, Apr. 2007, p. 083705. EBSCOhost, https://doi.org/10.1063/1.2721374.

APA

Lu, J. G., Fujita, S., Kawaharamura, T., Nishinaka, H., Kamada, Y., Ohshima, T., Ye, Z. Z., Zeng, Y. J., Zhang, Y. Z., Zhu, L. P., He, H. P., & Zhao, B. H. (2007). Carrier concentration dependence of band gap shift in n-type ZnO:Al films. Journal of Applied Physics, 101(8), 083705. https://doi.org/10.1063/1.2721374

Chicago

Lu, J. G., S. Fujita, T. Kawaharamura, H. Nishinaka, Y. Kamada, T. Ohshima, Z. Z. Ye, et al. 2007. “Carrier Concentration Dependence of Band Gap Shift in N-Type ZnO:Al Films.” Journal of Applied Physics 101 (8): 083705. doi:10.1063/1.2721374.